xR SiC Series 10A-1200V Schottky Diode UJ2D1210T PSPICE Model

xR SiC Series
10A-1200V Schottky Diode
UJ2D1210T
PSPICE Model
PSPICE Library of USCi 1200V-10A SiC JBS Diode UJ2D1210T
Copyright: United Silicon Carbide, Inc.
Revision : 1.0
Release Date : 1-March-2014
Copy the following code into a SPICE software program for simulation of the UJ2D1210T
device
.subckt UJ2D1210T nAnode nCathode
La
nAnode
na
6n
Rla
nAnode
na
200
D1a na nk Dtemp
Gleak na nk value={-Ir_Io(TEMP+273.15)*exp(V(nk,na)*Ir_alpha(TEMP+273.15))}
Lk
nk
nCathode
1n
Rlk
nk
nCathode
200
.MODEL Dtemp D
+ IS=1.100E-16
+ N=1.03 XTI=7
+ RS=.047 TRS1=7.8831e-3 TRS2=4.1837e-5
+ BV = 1800 IBV =1e-10 TBV1=1e-4
+ CJO=6.36e-10
+ M=.45
+ VJ=1.25
+ FC=0.9499
+ TT=254.33E-12
.FUNC Ir_Io(tmp) {-4.968e-18*pwr(tmp,4)+4.667e-15*pwr(tmp,3)-1.192e-12*tmp*tmp+2.697e-11*tmp+1.5897e-8}
.FUNC Ir_alpha(tmp) {-3.507e-11*pwr(tmp,3)+1.263e-8*tmp*tmp+1.385e-6*tmp+7.214e-3}
.ends
DISCLAIMER:
This model is constructed based on the typical characteristics of the device shown in the
datasheet and is not warranted by USCi as fully representing all of the specifications and
operating characteristics of the device. The bipolar injection characteristic of the device has not
been modelled. This model is valid for the temperature range of -55°C to 175°C. This model is
intended for use by customers in the design of electrical circuits using USCi SiC products. No
responsibility for inaccuracies can be assumed by USCi. USCi does not assume any liability
arising out of the use of the data or circuits builds therefrom. USCi reserves the right to make
any change to the model without prior notice.
Rev 1.0
www.unitedsic.com
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