ECW20P20-Z P CHANNEL LATERAL MOSFET P Channel Lateral Mosfet Designed specifically for linear audio amplifier applications High-speed for high bandwidth amplifiers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20-Z ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDSS Drain – Source Voltage -200V VGSS Gate – Source Voltage +/-20V ID Continuous Drain Current -16A I DR Body Drain Diode Current -16A PD Allowable Power Dissipation* Tcase = 25°C 250W Tch Channel Temperature 150°C Tstg Storage Temperature Range -55 to +150°C *Thermal Resistance, Junction To Case 0.5 deg/watt WARNING: These lateral mosfets do not include a G-S protection network and care must therefore be taken with static handling precautions and the appropriate protection in the amplifier circuit. Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 1 ECW20P20-Z ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ BVDSX Drain-Source Breakdown Voltage VGS = -10V ID = -10mA -200 I GSS Gate-Source Leakage Current V DS = 0 VGS = ±20V VGS(off ) Gate-Source Cut-off Voltage VDS = -10V I D = -100mA VDS(sat)* Drain-Source Saturation Voltage V GD = 0 I D = -16A |yfs|* Forward Transfer Admittance VDS = 10V I DS = -3A IDSX Drain-Source Cut-Off Current VGS = -10V VDS = -200V -0.1 1.4 Max. Units V 100 µA -1.5 V -12 V 4 S( ) -10 mA * Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2% DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance t on Turn-On Time t off Turn-Off Time VGS = 0 VDS = -10V f = 1.0MHz VDS = -20V ID = 7A Tel: +44 (0)1702 543500 Min. Typ Max. Units 1850 pF 850 pF 55 pF 150 ns 105 ns Fax: +44 (0)1702 543700 2 ECW20P20-Z GENERAL CHARACTERISTICS (T = 25°C unless otherwise stated) 20 18 16 14 12 10 8 6 4 2 0 8V 7V Typical Output Characteris cs Pch= 250W Drain Current (A) Drain Current (A) Typical Output Characteris cs 6V 5V 4V 3V 2V 0 1.5V 20 40 Drain - Source Voltage (V) 20 18 16 14 12 10 8 6 4 2 0 VDS = -10V 6V 5V 0 60 2 4 6 Drain - Source Voltage (V) 18 16 14 12 10 8 6 4 2 0 +25°C 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -0.1 Drain Current (A) Drain Current (A) 8 4V 3V 2V 1.5V 10 Transfer Characteris Transfer Characteris cs 0 2 4 6 8 10 0 0.5 Gate - Source Voltage (V) 3A 1.5 2 Transconductance 10.00 9A Drain Current (A) 10 6A 1 Gate Source Voltage (V) Drain -Source Voltage vs Gate-Source Voltage 12 Drain - Source Voltage (V) 8V 7V 8 6 4 VDS = -20V 1.00 2 0.10 0 1 3 5 Gate - Source (V) 7 9 0 5 10 15 Drain Current (A) Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 3 ECW20P20-Z Typical Capacitance vs Gate -Source Voltage (V) Forward Bias Safe Operating Area 2500 100 1500 1000 COSS 1 0.1 CRSS 0 200V 500 10 160V 0.01 0 5 Gate Source Voltage (V) 10 1 10 100 1000 Drain - Source Voltage (V) 1.80 (0.071) 2.01 (0.079) 3.10 (0.122 3.48 (0.137 2.29 (0.090) 2.69 (0.106) 5.79 (0.228) 6.20 (0.244) 19.51 (0.768) 26.49 (0.807) 25.48 (1.003) 26.49 (1.043) 4.60 (0.181) 5.21 (0.205) 19.81 (0.780) 21.39 (0.842) Cpacitance (pF) 2000 Drain Current (A) CISS 1 0.48 (0.019) 0.84 (0.033) 0.76 (0.030) 1.30 (0.051) 2.59 (0.102) 3.00 (0.118) 5.45 (0.215) BSC 2 plcs. 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) 1. GATE 2. SOURCE 3. DRAIN dimensions in mm(inches) MECHANICAL DATA Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 4
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