Cell Type: RWE3G-ID2/150-8040 Drawing and picture not to scale Cell Type: RWE3G-ID2/150-8040 Design and Mechanical Data Base Material GaInP2/GaAs/Ge on Ge substrate AR-coating TiOx /Al2O3 Dimensions 40 x 80mm ± 0.1mm Cell Area 30.18 cm² Average Weight ≤ 86 mg/cm² Epi-Wafer Thickness 150 ± 20 µm Ag - Thickness 4 – 10 µm Grid Design Grid system with 3 contact pads Shadow Protection Integral by pass diode protecting the adjacent cell Vforward (1.2 ISC) = 2.5 V; T= 25 °C ± 3°C Electrical Data BOL 1E14 2E14 4E14 Average Open Circuit VOC [mV] 2554 0.942 0.934 0.920 Average Short Circuit ISC [mA/cm²] 16.5 0.999 0.980 0.955 Voltage at max. Power Vpmax [mV] 2258 0.953 0.943 0.926 Current at max. Power I [mA/cm²] 15.9 0.999 0.982 0.92 Maximal Power P max [mW/cm²] 35.9 0.952 0.926 0.852 Average Efficiency ηbare [%] 26.6 0.952 0.926 0.852 pmax Temperature Gradients Voltage dVoc/dT [mV/°C] - 6.0 - 6.3 - 6.5 - 6.5 Short Circuit dIsc /dT [mA/cm²/C°] 9.0 8.3 8.6 10.0 Voltage dVpmax /dT [mV/°C] - 6.4 - 6.8 - 6.8 - 6.9 Power dP mpax /dT mW/cm²/°C] - 0.09 - 0.09 - 0.09 -0.085 Absorptivity ≤ 0,91 (with CMX 100 AR) Pulltest > 1.7 N at 45 ° welding test (with 12.5 µm Ag stripes) Development Status Under Qualification for Herschel Planck RWE Space Solar Power GmbH Theresienstr. 2 74072 Heilbronn phone: +49 7131 67 2603 telefax: +49 7131 67 2727 e-mail: [email protected] website: www.rwespace.com HNR 0002151-00 Threshold Values
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