Session 4.02 - Nanyang Technological University

VIRTUS, IC Design
Centre of Excellence
280GHz CMOS On-chip Composite Right/Left
Handed Transmission Line based Leaky Wave
Antenna with Broadside Radiation
YangShang, Hao Yu*, Peng Li, Yuan Liang, and Chang Yang
School of Electrical and Electronic Engineering, Nanyang
Technological University, Singapore, 639798,
E-mail: [email protected]
NTU CMOS Emerging Technology Group
Outline
• Background and Motivation
• CRLH T-line Based Leaky Wave
Antenna Design
• Antenna Layout and Simulation
• Measurements
• Conclusion
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Background and Motivation
(0.1~10THz)
General Specifications for medical
imaging
1. Resolution: Penetration depth: 3~5 mm
(Sensitive to thin tissue); Spatial resolution: ~
200 μm; Depth resolution in the skin: ~ 40 μm
(3D Imaging)
2. Species-specific spectral
absorption of THz energy: Sensitive to Hbond vibration
3. Non-ionizing :
not harmful to body
[“Terahertz imaging comes into view”, Physics world, 2001]
[“A promising diagnostic method: Terahertz pulsed imaging and
spectroscopy”, World J Radiol 2011 March 28; 3(3): 55-65]
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Design Challenges of THz Imaging
System
• Propagation loss
is high!
• High gain on-chip
antenna!
• Compact phasearrayed
metamaterial antenna at
THz
[T. Schneider et al., “Link Budget Analysis for Terahertz Fixed Wireless Links”, IEEE Transactions On Terahertz Science And Technology, Vol. 2, No. 2, Mar.2012.]
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What is Metamaterial?
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Metamaterial : CRLH T-line
Left-handed
2.0
Region
Bandgap Region
β
1.5
1.0
Dispersion
Diagram:
α
0.5
0.0
-0.5
Righthanded
Region
-1.0
-1.5
-2.0
20 40 60 80 100 120 140 160 180 200
Low Stop Band Frequency (GHz)High Stop Band
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Leaky Wave Antenna Design by
CRLH T-line
Composite Right/Left
Handed Transmission
Line (CRLH T-line)
Equivalent Circuit for Unit
Cell
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Structure of on-chip CRLH unit-cell
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CRLH T-line Based Leaky
Wave Antenna(LWA) Design
LWA: Traveling wave structure with periodic radiation aperture
Y
θMB
Z
k0
β>0
ky
(a)
k0= ky
β= 0
β<0
(c)
Equal Magnitude Line
CRLH T-line
Main beam radiation angle:
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ky
(b)
Equal Phase Line
θ MB =arcsin ( β k 0 )
k0
• CRLH T-line:
β
Conventional
T-line
>, < and = 0 Only >0
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Antenna Layout
• GF CMOS65nm
Antenna Layer Configuration
13 cells
P1
P2
Wf
Wp
Air
Si Layer
Substrate
gp
Lp
Wm
13-cell CRLH Tline LWA
Test Structure Layer Configuration
Air
dm
Unit Cell
100 μm
Wm
`
Lf
Wf=3μm, Lf=43μm
gp=2μm, Wp=4μm
Lp=32μm, Wm=3.5μm
dm = 12μm
Via Bar(M1 ~ LB) GND
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Substrate
13-cell CRLH
T-line
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Simulation Results
100
90
80
70
60
50
40
30
20
10
0
no High-Resitivity Si layer
High-Resitivity Si layer
Enhancement
25
20
Enhancement
Radiation Efficiency (%)
After stacking the dielectric layer of with high resistivity
of Si enhanced to 40.5~65.2%. The maximum antenna
gain of 4.1dBi is achieved at 280GHz.
15
10
230 240 250 260 270 280 290
Frequency (GHz)
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Measurement Results
10
-10
200
5
150
0
100
S21 (dB)
S11 (dB)
-10
-15
-15
-20
S21 Measurement
S21 HFSS
S21 Circuit
S11 Measurement
S11 HFSS
S11 Circuit
-20
-25
-25
-30
220 230 240 250 260 270 280 290 300 310 320
Phase(S11) Measurement
Phase(S11) HFSS
Phase(S11) Circuit
|β| Measurement
|β| HFSS
|β| Circuit
K0
50
β<k0
0
2.8Ω
CL
9k
8k
7k
6k
5k
4k
-50
3k
-100
2k
-150
1k
-200
220
0
240
260
280
300
320
Frequency (GHz)
Frequency (GHz)
RS
10k
LL
CR
LR
GL
14.7fF 28.3pH 13.8fF 15.6pH 1.3mS
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|β| (Rad/m)
-5
Phase(S11) (Deg)
-5
Conclusion
• A composite right/left handed transmission line is
demonstrated with measurement results from 220 to
325GHz in 65nm CMOS process for the leaky wave
antenna (LWA) design with broadside radiation.
– Stacking of dielectric layer with high resistivity of Si is utilized to improve
the LWA efficiency
– The propose antenna design has radiation efficiency of 65%, and the
antenna gain of 4.1dBi at 280GHz
– The proposed compact LWA structure can be potentially deployed for
the design of on-chip THz phase-arrayed antenna
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Acknowledgement
• Simulation: EMX from Integrand Software
• Measurement: VIRTUS IC Design Centre of
Excellence at Nanyang Technological
University
• Funding and Support: Singapore MOE
Tier-1 Funding and Global Foundries and
MediaTek sponsorship for CMOS 65nm
tapeouts
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Thank You!
Q&A
http://www.ntucmosetgp.net
Email: [email protected]
Skype: hao.yu.ntu
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