5SNA 1600N170100

VCE
IC
=
=
1700 V
1600 A
ABB HiPak
IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-02 Apr 14
 Low-loss, rugged SPT chip-set
 Smooth switching SPT chip-set for good
EMC
 Industry standard package
 High power density
 AlSiC base-plate for high power cycling
capability
 AlN substrate for low thermal resistance
 Improved high reliability package
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
Tc = 80 °C
1600
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
3200
A
20
V
9100
W
1600
A
3200
A
13200
A
10
µs
4000
V
150
°C
Total power dissipation
DC forward current
Peak forward current
Surge current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
IF
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 1200 V, VCEM CHIP  1700 V
VGE  15 V, Tvj  125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
VCES
Conditions
2)
-40
125
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNA 1600N170100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1700
Collector-emitter 4)
saturation voltage
VCE sat
IC = 1600 A, VGE = 15 V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 125 °C
VGE(TO)
IC = 160 mA, VCE = VGE, Tvj = 25 °C
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
Module stray inductance
L CE
Resistance, terminal-chip
RCC’+EE’
3)
4)
typ
max
Unit
V
Tvj = 25 °C
2.0
2.3
2.6
V
Tvj = 125 °C
2.3
2.6
2.9
V
Tvj = 25 °C
8
mA
Tvj = 125 °C
80
mA
-500
500
nA
4.5
6.5
V
IC = 1600 A, VCE = 900 V,
VGE = -15 V .. 15 V
14.6
µC
152
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
14.6
nF
6.4
VCC = 900 V,
IC = 1600 A,
RG = 0.82 ,
VGE = 15 V,
L = 50 nH, inductive load
Tvj = 25 °C
290
Tvj = 125 °C
300
Tvj = 25 °C
175
Tvj = 125 °C
190
VCC = 900 V,
IC = 1600 A,
RG = 0.82 ,
VGE = 15 V,
L = 50 nH, inductive load
Tvj = 25 °C
1050
Tvj = 125 °C
1140
Tvj = 25 °C
150
Tvj = 125 °C
170
VCC = 900 V, IC = 1600 A,
VGE = ±15 V, RG = 0.82 ,
L = 50 nH, inductive load
Tvj = 25 °C
380
Tvj = 125 °C
530
VCC = 900 V, IC = 1600 A,
VGE = ±15 V, RG = 0.82 ,
L = 50 nH, inductive load
Tvj = 25 °C
460
Tvj = 125 °C
590
ns
ns
ns
ns
mJ
mJ
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V
7200
A
15
nH
TC = 25 °C
0.10
TC = 125 °C
0.13
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 2 of 9
5SNA 1600N170100
Diode characteristic values
Parameter
Forward voltage
5)
Symbol
Conditions
VF
IF = 1600 A
6)
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
5)
6)
VCC = 900 V,
IF = 1600 A,
VGE = 15 V,
RG = 0.82 
L = 50 nH
inductive load
Erec
typ
max
Tvj = 25 °C
1.65
2.0
Tvj = 125 °C
1.7
2.0
Tvj = 25 °C
1090
Tvj = 125 °C
1400
Tvj = 25 °C
390
Tvj = 125 °C
690
Tvj = 25 °C
620
Tvj = 125 °C
830
Tvj = 25 °C
280
Tvj = 125 °C
480
V
A
µC
ns
mJ
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
7)
Conditions
min
typ
max
Unit
Rth(j-c)IGBT
0.011
K/W
Rth(j-c)DIODE
0.018 K/W
Rth(c-s)IGBT IGBT per switch,  grease = 1W/m x K
0.012
K/W
Rth(c-s)DIODE Diode per switch,  grease = 1W/m x K
0.024
K/W
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
7)
Parameter
Symbol
Dimensions
L W
Comparative tracking index
x
x
Conditions
H Typical , see outline drawing
CTI
min
typ
max
130 140 38
x
x
Unit
mm
600
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
Surface creepage distance
ds
according to IEC 60664-1 Term. to base: 28.2
and EN 50124-1
Term. to term: 28.2
Mass
m
7)
Unit
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
2)
min
19
mm
19
mm
820
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 3 of 9
5SNA 1600N170100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 4 of 9
5SNA 1600N170100
3200
3200
2800
2800
VCE = 25 V
25 °C
2400
2000
2000
IC [A]
IC [A]
125 °C
2400
1600
1600
1200
1200
125 °C
800
800
400
400
25 °C
VGE = 15 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE [V]
Fig. 1
7
8
9 10 11 12 13
VGE [V]
Fig. 2
Typical on-state characteristics, chip level
3200
Typical transfer characteristics, chip level
3200
17V
17V
2800
2800
15V
15V
13V
13V
2400
2400
11V
11V
2000
9V
2000
9V
IC [A]
IC [A]
6
1600
1600
1200
1200
800
800
400
400
Tvj = 125 °C
Tvj = 25 °C
0
0
0
1
2
3
4
5
6
0
VCE [V]
Fig. 3
Typical output characteristics, chip level
1
2
3
4
5
6
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 5 of 9
5SNA 1600N170100
1.6
4.0
VCC = 900 V
VCEM ≤ 1700 V
RG = 0.82 ohm
VGE = ±15 V
Tvj = 125 °C
L = 50 nH
1.4
1.2
3.0
2.5
Eon, Eoff [J]
1.0
Eon, Eoff [J]
VCC = 900 V
VCEM ≤ 1700 V
IC = 1600 A
VGE = ±15 V
Tvj = 125 °C
L = 50 nH
3.5
0.8
Eoff
0.6
Eon
Eon
2.0
1.5
0.4
1.0
0.2
0.5
Eoff
Esw[mJ] = 1.63 x 10 -4 x I C2 +0.275 x I C + 258
0.0
0.0
0
1000
2000
3000
4000
0
1
2
3
4
5
IC [A]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
8
9 10 11 12 13
Typical switching energies per pulse
vs gate resistor
VCC = 900 V
VCEM ≤ 1700 V
IC = 1600 A
VGE = ±15 V
Tvj = 125 °C
L = 50 nH
1
td(on)
tf
0.1
VCC = 900 V
VCEM ≤ 1700 V
RG = 0.82 ohm
VGE = ±15 V
Tvj = 125 °C
L = 50 nH
tr
0.01
td(on), tr, td(off), tf [µs]
td(off)
td(on), tr, td(off), tf [µs]
7
10
10
td(off)
td(on)
1
tr
tf
0.1
0
1000
2000
3000
4000
0
IC [A]
Fig. 7
6
RG [ohm]
Typical switching times
vs collector current
1
2
3
4
5
6
7
8
9 10 11 12 13
RG [ohm]
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 6 of 9
5SNA 1600N170100
1000
20
VCC = 900 V
Cies
15
100
VGE [V]
C [nF]
VCC = 1300 V
Coes
10
10
Cres
5
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
IC = 1600 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
2
4
6
Qg [µC]
8
10
12
Typical gate charge characteristics
2.5
VCC  1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 0.82 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
VCE [V]
1500
2000
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 7 of 9
5SNA 1600N170100
800
VCC = 900 V
RG = 0.82 ohm
Tvj = 125 °C
L = 50 nH
1600
700
Erec
400
300
-5
Erec
2
Erec [mJ] = -4 x 10 x I F + 0.314 x I F + 95
0
0
0
1000
2000
3000
4000
0
1
IF [A]
2
RG = 6.8 Ω
100
200
RG = 12 Ω
200
400
Fig. 12
RG = 4.7 Ω
600
RG = 0.56 Ω
800
1000
Qrr
RG = 0.82 Ω
1000
500
RG = 1.2 Ω
Qrr
1200
RG = 2.2 Ω
1200
1600
1400
600
Erec [mJ], Qrr [µC]
Erec [mJ], Irr [A], Qrr [µC]
1400
Irr
Irr
VCC = 900 V
IC = 1600 A
Tvj = 125 °C
L = 50 nH
Irr [A]
1800
800
600
400
200
0
3
4
5
6
7
8
9 10 11
di/dt [kA/µs]
Typical reverse recovery characteristics
vs forward current
Fig. 13
3200
Typical reverse recovery characteristics
vs di/dt
3600
VCC  1200 V
di/dt  8 kA/µs
Tvj = 125 °C
3200
2800
25°C
2800
2400
125°C
2400
IR [A]
IF [A]
2000
1600
2000
1600
1200
1200
800
800
400
400
0
0
0
0.5
1
1.5
2
2.5
0
VF [V]
Fig. 14
Typical diode forward characteristics,
chip level
500
1000
1500
2000
VR [V]
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-02 Apr 14
page 8 of 9
5SNA 1600N170100
0.1
Analytical function for transient thermal
impedance:
Zth(j-c) Diode
Z th (j-c) (t) =  R i (1 - e-t/ i )
0.01
i 1
0.001
i
1
2
3
4
IGBT
Zth(j-c) IGBT
Ri(K/kW)
7.59
1.8
0.743
0.369
i(ms)
202
20.3
2.01
0.52
DIODE
Zth(j-c) [K/W] IGBT, DIODE
n
Ri(K/kW)
12.6
2.89
1.3
1.26
i(ms)
210
29.6
7.01
1.49
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
Related documents:
5SYA 2042 Failure rates of HiPak modules due to cosmic rays
5SYA 2043 Load – cycle capability of HiPaks
5SYA 2045 Thermal runaway during blocking
5SYA 2053 Applying IGBT
5SYA 2058 Surge currents for IGBT diodes
5SYA 2093 Thermal design of IGBT modules
5SYA 2098 Paralleling of IGBT modules
5SZK 9111 Specification of environmental class for HiPak Storage
5SZK 9112 Specification of environmental class for HiPak Transportation
5SZK 9113 Specification of environmental class for HiPak Operation (Industry)
5SZK 9120 Specification of environmental class for HiPak
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
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changes or to modify the contents of this
document without prior notice.
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the information contained therein. Any
reproduction or utilization of this
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purposes without our prior written consent
is forbidden.
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contrary to the instructions in this
document is excluded.
Doc. No. 5SYA1564-02 Apr 14

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