2012 年 発表文献リスト
（論文発表）
1. 葛原正明, “GaN 系高効率電子デバイスの開発動向,”応用物理 81, 464, 6 月 (2012).
2. H. Tokuda, T. Kojima, and M. Kuzuhara, “A method to increase sheet electron density and
mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures,” Appl.
Phys. Lett. vol. 101, 082111 Aug. (2012).
3. M. Hatano, N. Yafune, H. Tokuda, Y. Yamamoto, S. Hashimoto, K. Akita, and M.
Kuzuhara, “Superior DC and RF performance of AlGaN-channel HEMT at high
temperatures,” IEICE Trans. Electron. vol. E95-C, 1332 Aug. (2012).
4. H. Tokuda, T. Kojima, and M. Kuzuhara, “Role of Al and Ti for ohmic contact formation in
AlGaN/GaN heterostructures,” Appl. Phys. Lett. vol. 101, 262104 Dec. (2012).
（国際会議発表）
1. M. Kuzuhara and H. Tokuda, “Status and Perspective of GaN-based Technology in
Japan,” CSMANTECH 2012, Boston, Dig., pp.39-42, Apr. (Invited)
2. M. Kuzuhara, “GaN-based electronics,” ASDAM 2012, Smolenice, pp.1-6, Nov. (Invited)
3. M. Hatano, Y. Taniguchi, H. Tokuda, and M. Kuzuhara, “Influence of annealing on DC
performance for AlGaN/GaN MIS HEMTs,” IWN 2012, Sapporo, Thp-ED-7, Oct. 2012.
4. K. Kodama, Y. Naito, H. Tokuda, and M. Kuzuhara, “Improved effective channel electron
velocity in AlGaN/GaN HEMTs with sub-100 nm gate-to-drain distance,” Intl. Conf. on
Solid State Devices and Materials (SSDM), Sept., 2012, pp.862-863.
5. T. Asano, N. Yamada, T. Saito, H. Tokuda, and M. Kuzuhara, “Breakdown characteristics
in AlGaN/Gan HEMTs with multi-field-plate structure,” International Meeting for Future
of Electron Devices, Kansai (IMFEDK), Osaka, 2012, pp.100-101.
6. M. Ogasawara, S. Kodama, H. Tokuda, and M. Kuzuhara, “Effects of Ohmic metal
thickness on drain current capability of AlGaN/GaN HEMTs,” International Meeting for
Future of Electron Devices, Kansai (IMFEDK), Osaka, 2012, pp.102-103.
7. Y. Kamiya, K. Kodama, T. Kimizu, H. Tokuda, and M. Kuzuhara, “Analysis of electron
transport in AlGaN based on empirical pseudopotential method,” International Meeting
for Future of Electron Devices, Kansai (IMFEDK), Osaka, 2012, pp.104-105.

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